PHOTORESIST CONTAINING Si POLYMER

摘要

PROBLEM TO BE SOLVED: To form, with satisfactory dimensional accuracy, a pattern of a thin layer resist crossing diffusion steps or etched pattern steps on a substrate.

SOLUTION: A photoimageable composition contains a silicon containing polymer having the ratio of silanol groups to silicon atoms of 0.01 to 1.5. The polymer is a chemical amplification positive or negative type composition containing a photoacid-labile group to be an ester group or an acetal group, or a polysil-sesqui-oxane having a halogenated sulfonamide group. In a positive type photoimageable composition containing a photoactive component and a polymer component, the polymer component contains the polymer containing the Si atoms and the silanol groups and the polymer has the ratio of the silanol groups to the Si atoms of about 0.01 to 1.5.

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