| 摘要 |
PROBLEM TO BE SOLVED: To provide an embedded insulated gate-structured power semiconductor device capable of obtaining a big current breaking capacity and capable of realizing a low on-resistance as in almost a thyristor while preventing the latch up of a parasitic thyristor. SOLUTION: A plurality of striped grooves 5 are formed on the side of an n-type base layer 4 having a p-type emitter layer 3, an n-type base layer 1 and a p-type base layer 4, and an insulated gate electrode 7 is embedded and formed in the grooves 5. In the p-type base layer 4, a n-type turn-off channel layer 8 contacting the sides of the grooves 5 is formed, and a p-type drain layer 9 is formed on the surface thereof. In the p-type base layer 4, a shallow diffusion-formed n-type source layer 10 is provided to prevent the thyristor from latching up, and the p-type drain layer 9 and the n-type source layer 10 are simultaneously contacted to form a cathode electrode 11. COPYRIGHT: (C)2004,JPO&NCIPI
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