| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a non-volatile memory element in which a cell size is not increased. SOLUTION: The manufacturing method for the non-volatile memory element is constituted by containing a stage in which a trench-element isolation film limiting an active region and an element isolation region is formed in a silicon substrate, a stage in which a tunnel oxide film and a polysilicon layer for a floating gate are formed on the substrate, a stage in which a sacrificing insulating film is formed in a polysilicon layer shape for the floating gate, a stage in which a photosensitive film pattern is formed on the insulating film and a polymer layer is formed on the side wall of the insulating film patterned while etching the insulating film until the polysilicon layer is exposed while using the pattern as a mask, and a stage in which the polysilicon layer exposed while using the polymer layer and the pattern as masks and the tunnel oxide film are removed selectively and a polysilicon layer pattern for the floating gate and a tunnel oxide-film pattern are formed. COPYRIGHT: (C)2004,JPO&NCIPI
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