| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile memory element, which can prevent the dielectric constant of the whole dielectric film from decreasing and charging capacity from decreasing by deterring a lower floating gate from oxidizing although a metal-based oxide film is used as a dielectric film. SOLUTION: The method includes the stages of: forming the floating gate 104 on a semiconductor substrate 100; forming a nitrified film 106a by nitrifying the top surface of the floating gate; depositing a silicon nitride film 108 on the floating gate having been nitrified; depositing a metal oxide film 110 on the silicon nitride film; heat-treating the metal-based oxide film to supply oxygen; and forming a control gate 114 on the metal-based oxide film. COPYRIGHT: (C)2004,JPO&NCIPI
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