发明名称 Positive photosensitive resin compositions and semiconductor device
摘要 The present invention provides a positive-working photosensitive resin composition with high sensitivity that gives a pattern having a high resolution and a high film thickness retention rate. In other words, the present invention provides a positive-working photosensitive resin composition comprising 100 parts by weight of a polyamide and 1 to 50 parts by weight of a photosensitive material, that is, a 1,2-naphthoquinone-2-diazide-5-sulfonate ester compound or a 1,2-naphthoquinone-2-diazide-4-sulfonate ester compound of a phenol compound. In addition, the present invention provides a positive-working photosensitive resin composition comprising 100 parts by weight of a polyamide, 1 to 50 parts by weight of a photosensitive material, that is, a 1,2-naphthoquinone-2-diazide-5-sulfonate ester compound or a 1,2-naphthoquinone-2-diazide-4-sulfonate ester compound of a phenol compound and 1 to 30 parts by weight of a phenol compound. Furthermore, the present invention provides a semiconductor device manufactured by using said positive-working photosensitive resin composition.
申请公布号 US2004146801(A1) 申请公布日期 2004.07.29
申请号 US20030474831 申请日期 2003.10.15
申请人 BANBA TOSHIO;MAKABE HIROAKI;HIRANO TAKASHI 发明人 BANBA TOSHIO;MAKABE HIROAKI;HIRANO TAKASHI
分类号 G03F7/022;G03F7/023;G03F7/075;(IPC1-7):G03F7/023 主分类号 G03F7/022
代理机构 代理人
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