| 摘要 |
A semiconductor device and method for manufacturing the same in which the semiconductor device includes a substrate; an MOS transistor formed on the substrate; an interlayer dielectric provided on at least a portion of the MOS transistor; a hydrogen occluding material which is an interstitial hydrogen occluding compound, which is provided on the interlayer dielectric, and which is employed as a wire by being disposed in the vicinity of the top of the MOS transistor; and a ferroelectric capacitor which has a height which is greater than that of the MOS transistor, wherein the hydrogen occluding material is placed between the MOS transistor and the ferroelectric capacitor. |
