METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH IMPROVED CLEANING PROCESS CAPABLE OF ENTIRELY REMOVING NITRIDE LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve manufacturing yield by removing water-spots on a polysilicon layer using NH4OH and removing a native oxide layer using BOE(Buffered Oxide Etchant) when cleaning a nitride layer using H3PO4 solutions. CONSTITUTION: A nitride layer is formed on a polysilicon layer(14) of a wafer(11). The nitride layer is cleaned by dipping in H3PO4 solutions. At this time, water-spots are generated on the polysilicon layer. The water-spots are removed by dipping in NH4OH solutions. At this time, a native oxide layer is generated. The native oxide layer is removed by dipping in BOE solutions.