| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to increase conductivity of metallization by forming contact holes using multilayer oxide patterns. CONSTITUTION: A substrate(11) with conductive patterns(12,14) is prepared. A first, second and third insulating layers(13,15,16) are sequentially formed on the resultant structure. Contact holes(18a,18b,18c) are formed to expose the substrate and the conductive patterns by dry-etching of the third, second and first insulating layer. A photoresist layer is filled in the contact holes and a photoresist pattern is formed on the third insulating layer. Line pattern holes(20a-20c) are formed by selectively etching the third insulating layer using the photoresist pattern as a mask. The photoresist pattern is removed. A conductive layer is filled in the contact holes and the line pattern holes. By polishing the conductive layer to expose the third insulating layer, metal lines are formed to contact the conductive patterns.
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