Precursors for depositing silicon containing films and processes thereof

摘要

Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: ÄR<1> 2N-NHÜnSi(R<2>)4-n where each R<1> is independently selected from alkyl groups of C1 to C6; each R<2> is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n = 1-4. Some of the hydrazinosilanes are novel precursors. <IMAGE>