发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT, METHOD FOR FABRICATING ELEMENT AND ELEMENT |
摘要 |
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions. <IMAGE> |
申请公布号 |
EP1441426(A1) |
申请公布日期 |
2004.07.28 |
申请号 |
EP20020772973 |
申请日期 |
2002.10.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;SONY CORPORATION |
发明人 |
ASATSUMA, TSUNENORI;TOMIYA, SHIGETAKA;TAMAMURA, KOSHI;TOJO, TSUYOSHI;GOTO, OSAMU;MOTOKI, K. |
分类号 |
B82Y20/00;C30B25/02;C30B29/40;H01L21/02;H01L21/20;H01L21/205;H01L33/00;H01L33/02;H01L33/16;H01L33/32;H01S5/02;H01S5/20;H01S5/22;H01S5/223;H01S5/323;H01S5/40 |
主分类号 |
B82Y20/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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