| 摘要 |
A monolithic photodetector comprises a first active area of doped single-crystal silicon corresponding to first and second photodiodes having same surface area as two charge transfer metal oxide semiconductor (MOS) transistors. A cathode of each photodiode is connected to a cathode of the storage diode via the charge transfer MOS transistors as one storage diode. A monolithic photodetector comprises: (i) a first active area of doped single-crystal silicon corresponding to first and second photodiodes having a same surface area as two charge transfer MOS transistors, and as one storage diode, a cathode of each photodiode is connected to a cathode of the storage diode via one of the charge transfer MOS transistors; (ii) second active area of doped single-crystal silicon arranged next to a portion of the first active area associated with the second photodiode and corresponding to a precharge switch having a first terminal connected to the cathode of the storage diode and a second terminal connected to a reference voltage; and (iii) a third active doped single-crystal silicon area arranged next to the first active area associated with the first photodiode and corresponding to two read MOS transistors in series. The gate of the read transistors is connected to the cathode of the storage diode and the drain or the source of the read transistors are connected to a processing system. The surfaces of the second and third active areas exposed to lighting are identical. |
