发明名称 |
Method of manufacturing a flip-chip semiconductor device with a stress-absorbing layer made of thermosetting resin |
摘要 |
In a flip-chip type semiconductor device, a plurality of pad electrodes are formed on a semiconductor substrate. An insulating stress-absorbing resin layer made of thermosetting resin is formed on the semiconductor substrate and has openings corresponding to the pad electrodes. A plurality of flexible conductive members are filled in the openings. A plurality of metal bumps are formed on the flexible conductive layers.
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申请公布号 |
US6767761(B2) |
申请公布日期 |
2004.07.27 |
申请号 |
US20030686568 |
申请日期 |
2003.10.17 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
HONDA HIROKAZU |
分类号 |
H01L23/52;H01L21/3205;H01L21/56;H01L21/60;H01L23/12;H01L23/29;H01L23/31;H01L23/485;(IPC1-7):H01L21/44;H01L21/48;H01L21/50 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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