Superjunction device with improved avalanche capability and breakdown voltage

摘要

A superjunction device has a plurality of equally spaced P columns in an N<-> epitaxial layer. The concentration of the P type columns is made greater than that needed for maintaining charge balance in the N<-> epi region and the P columns thereby to increase avalanche energy. An implant dose of 1.1E13 or greater is used to form the P columns.