发明名称
摘要 <p>An integrated circuit includes a substrate and a first insulating layer on the substrate that includes a first hole including a floor and a sidewall. A first conductive contact extends conformally on the sidewall and floor to define a groove in the first hole. A second insulating layer is provided on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is provided in the second hole and in the groove. These integrated circuits are fabricated by forming a first insulating layer on a substrate that includes a first hole including a floor and a sidewall. A first conductive contact is conformally formed on the sidewall and floor to define a groove in the first hole. A second insulating layer is formed on the first insulating layer and includes a second hole that exposes the groove. A second conductive contact is formed in the second hole and in the groove.</p>
申请公布号 KR100442106(B1) 申请公布日期 2004.07.27
申请号 KR20020035931 申请日期 2002.06.26
申请人 发明人
分类号 H01L21/768;H01L21/8242;H01L23/522;H01L27/108 主分类号 H01L21/768
代理机构 代理人
主权项
地址