| 摘要 |
This nonvolatile semiconductor memory device includes a word line regulator circuit 22, which supplies a voltage to a word line, a program/erase control circuit 21, which outputs a write control signal to the word line regulator circuit 22, and a pulse voltage step width storage circuit 23, which stores information of a voltage increment DeltaVg. The word line regulator circuit 22 supplies a voltage to a word line according to the write control signal from the program/erase control circuit 21 based on the information of a voltage increment DeltaVg stored in the pulse voltage step width storage circuit 23. A voltage increment DeltaVg by which a threshold voltage change of a memory cell becomes a predetermined voltage can be set for each chip by the pulse voltage step width storage circuit 23. Consequently, a highly reliable multi-valued write operation can be performed.
|
