| 摘要 |
In a magnetoresistive effect element in which at least a free layer (12) made of a ferromagnetic material, a nonmagnetic layer (13) made of a nonmagnetic material and a fixed layer (11) made of a ferromagnetic material and of which the magnetization direction is fixed are laminated in that order and in which information can be recorded by the use of a change of magnetization direction in the free layer (12), the free layer (12) is divided into a plurality of regions (12a), (12b), these regions (12a), (12b) are located around a write electrode (8) extending along the direction in which these respective layers (11) to (13) are laminated so as to surround the write electrode (8) and the respective regions (12a), (12b) surrounding the write electrode (8) constitute a magnetic field returning structure for returning a magnetic field. |
