METHOD FOR FORMING GATE OF TRANSISTOR

摘要

PURPOSE: A method for forming a gate of a transistor is provided to stabilize the operation of a transistor by easily controlling the length of an N- region as a lightly doped region to control the thickness of the wall of a dielectric and by patterning the second conductive layer to have a uniform thickness wherein the patterned wall of the dielectric is used as a mask. CONSTITUTION: A gate oxide layer(20) of a predetermined thickness is formed on a substrate(10). The first conductive layer(30) of a predetermined thickness is deposited on the gate oxide layer and is patterned to be a predetermined type by using the first conductive layer as a hard mask. Ions of a relatively low impurity density are implanted into the gate oxide layer at both sides of the patterned first conductive layer to form an N- region of the substrate. The second conductive layer(40) of a predetermined thickness is deposited by using the gate oxide layer and the first conductive layer. A dielectric layer(50) of a predetermined thickness is deposited along the upper part of the second conductive layer. The dielectric layer is patterned by a space etching process. The second conductive layer is patterned by an etch process using the patterned dielectric layer as a mask. Ions of a relatively high impurity density are implanted into the upper part of the gate oxide layer from which the second conductive layer is removed so that an N+ region is formed in the substrate.