| 摘要 |
A semiconductor memory device, having at least one floating gate, includes a semiconductor substrate; at least one device-isolation region buried in the semiconductor substrate, having a top surface protruding from a top surface of the semiconductor substrate, the top surface of the device isolation region having a concave section that has a depression thereon; at least one gate-insulating film formed on the semiconductor substrate; a first gate formed on the gate-insulating film, the device-isolation region and the depression; a gate-to-gate insulating film formed on the first gate and in the concave section and the depression of the device-isolation region; and a second gate formed on the gate-to-gate insulation film, the depression being filled with the second gate.
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