| 摘要 |
PURPOSE: A semiconductor memory device for improving tDQSQ(Data strobe edge to dout edge time) is provided to minimize a variation of transition time due to noise of supply voltages by providing additional supply voltages to a driver for driving a data strobe signal and a driver for driving a data signal. CONSTITUTION: A semiconductor memory device for improving tDQSQ includes a first supply voltage pad, a first ground voltage pad, a data output circuit, a second supply voltage pad, a second ground voltage pad, and a data strobe output circuit. The first supply voltage pad is used for receiving a supply voltage. The first ground voltage pad is used for receiving a ground voltage. The data output circuit(110) is used for outputting a data signal to a data output pad(120). The second supply voltage pad is used for receiving the supply voltage. The second ground voltage pad is used for receiving the ground voltage. The data strobe output circuit(210) is used for outputting a data strobe signal to a data strobe output pad(220).
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