发明名称 |
Manufacturing method of semiconductor device |
摘要 |
Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved.By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering method, or a dry-etching method is used in a wiring-forming step executed later, then it is possible to suppress electric charges which are generated on the substrate and which flow to the ground potential through the substrate, and to prevent damages to the substrate due to charge-up.
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申请公布号 |
US6767782(B2) |
申请公布日期 |
2004.07.27 |
申请号 |
US20020082311 |
申请日期 |
2002.02.26 |
申请人 |
RENESAS TECHNOLOGY CORP.;HITACHI TOKYO ELECTRONICS CO., LTD. |
发明人 |
SAIKAWA TAKESHI;MAENO RYOHEI;OKUDAIRA SADAYUKI;SAITO TETSUO;TAMARU TSUYOSHI;OHMORI KAZUTOSHI |
分类号 |
H01L23/522;H01L21/3213;H01L21/768;H01L21/8238;H01L27/08;H01L27/092;(IPC1-7):H01L21/823 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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