发明名称 Crystal growth method
摘要 In the CZ process using a cooling member surrounding a single crystal, the cooling member is permitted to effectively serve to increase a pulling speed. Cracks of the single crystal due to excessive cooling are prevented to occur. A high crystal quality is acquired. In order to realize these objects, the temperature of the inner peripheral surface of the cooling member 6 opposing to the outer peripheral surface of the single crystal 4 is restricted to 500° C. or below, even in the lower end, the temperature of which becomes the highest. To achieve this restriction, the thickness T of the cooling member 5 is 10 to 50 mm. The height H of the cooling member 6 is 0.1 to 1.5 times the diameter D of the single crystal 4.
申请公布号 US6767400(B2) 申请公布日期 2004.07.27
申请号 US20020130671 申请日期 2002.09.24
申请人 SUMITOMO MITSUBISHI SILICON CORPORATION 发明人 KUBO TAKAYUKI;KAWAHIGASHI FUMIO;ASANO HIROSHI;MIKI SHINICHIRO;NISHIMOTO MANABU
分类号 C30B29/06;C30B15/00;C30B15/14;H01L21/208;(IPC1-7):C30B15/20 主分类号 C30B29/06
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