发明名称 Method for damascene reworking
摘要 A method for avoiding processing damage to an anisotropically etched damascene feature in a reworking process including providing a first photoresist layer over a first anisotropically etched opening the first photoresist layer photolithographically patterned for forming a second anisotropically etched opening overlying the first anisotropically etched opening; blanket depositing a flowable resinous polymeric material to form a resinous layer over the first photoresist layer in a reworking process to include filling a remaining portion of the first anisotropically etched opening; removing the resinous layer and the first photoresist layer in a planarizing process to reveal an upper substrate surface; and, depositing a second photoresist layer over the upper substrate surface for photolithographic patterning of the second anisotropically etched opening overlying the first anisotropically etched opening in the reworking process.
申请公布号 US6767833(B2) 申请公布日期 2004.07.27
申请号 US20020188653 申请日期 2002.07.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 SHIH TSU;YU CHEN-HUA
分类号 H01L21/311;H01L21/768;(IPC1-7):H01L21/702 主分类号 H01L21/311
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