发明名称 |
Method for damascene reworking |
摘要 |
A method for avoiding processing damage to an anisotropically etched damascene feature in a reworking process including providing a first photoresist layer over a first anisotropically etched opening the first photoresist layer photolithographically patterned for forming a second anisotropically etched opening overlying the first anisotropically etched opening; blanket depositing a flowable resinous polymeric material to form a resinous layer over the first photoresist layer in a reworking process to include filling a remaining portion of the first anisotropically etched opening; removing the resinous layer and the first photoresist layer in a planarizing process to reveal an upper substrate surface; and, depositing a second photoresist layer over the upper substrate surface for photolithographic patterning of the second anisotropically etched opening overlying the first anisotropically etched opening in the reworking process.
|
申请公布号 |
US6767833(B2) |
申请公布日期 |
2004.07.27 |
申请号 |
US20020188653 |
申请日期 |
2002.07.02 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
SHIH TSU;YU CHEN-HUA |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/702 |
主分类号 |
H01L21/311 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|