发明名称 |
Method of Production of a thin film type semiconductor device having a heat-retaining layer |
摘要 |
An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and the amorphous silicon layer is crystallized by scanning a CW laser beam from the wide region toward the narrow region in a state that a polycrystalline silicon layer as a heat-retaining layer encloses the narrow region from a side face through the silicon oxide layer.
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申请公布号 |
US6767773(B2) |
申请公布日期 |
2004.07.27 |
申请号 |
US20020230161 |
申请日期 |
2002.08.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
SANO YASUYUKI;HARA AKITO;TAKEI MICHIKO;SASAKI NOBUO |
分类号 |
H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/00;H01L21/331;H01L21/76;H01L21/302 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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