Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting

摘要

Thin layers of high quality single-crystal piezoelectric material, high temperature sintered piezoelectric material, or high quality thin film grown material are transferred to an appropriate substrate using hydrogen ion implant layer splitting and bonding. The substrate to which the thin piezoelectric material layer is transferred may contain CMOS or GaAs circuitry. When the substrate contains CMOS or GaAs circuitry, the circuitry on the surface of the GaAs or CMOS substrate may be covered with an oxide. The oxide is then planarized using chemical mechanical polishing, and the thin film resonator material is transferred to the GaAs or CMOS circuit using wafer bonding and hydrogen ion layer splitting.