| 摘要 |
It is contrived to solve the problem of deformation of material due to differences in coefficient of thermal expansion, hardness and the like between a wiring metal and an insulating film surrounding the wiring metal, the problem of generation of voids in the wiring, and the like problems, and to improve initial characteristics and reliability of operation on a long-term basis. A method of producing a semiconductor system comprises the steps of: heating a metallic film to a temperature (B) of the stress yield point of the metal ±50° C. and holding the metallic film at that temperature for a predetermined period of time, and heating the metallic film to a temperature (C) which is not lower than the holding temperature and at which growth of crystal grain diameter occurs to thereby cause growth of crystal grain diameter of the metallic film.
|
