| 发明名称 |
Method of forming CVD titanium film |
| 摘要 |
Before deposition of a CVD titanium film on a cobalt silicide layer, an element which reacts with titanium is provided in the cobalt silicide layer in advance. Thereafter, the CVD titanium film is deposited on the cobalt silicide using a titanium tetrachloride gas.
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| 申请公布号 |
US6767812(B2) |
申请公布日期 |
2004.07.27 |
| 申请号 |
US20010984383 |
申请日期 |
2001.10.30 |
| 申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
ABE KAZUHIDE;HARADA YUSUKE |
| 分类号 |
H01L21/285;C23C16/02;C23C16/14;H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/28;H01L21/44 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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