METHOD FOR FABRICATING SEMICONDUCTOR DEVICE TO IMPROVE RELIABILITY AND CORRESPOND TO HIGH INTEGRATED SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve reliability and correspond to a high integrated semiconductor device by forming a contact hole of a fine critical dimension. CONSTITUTION: An insulation layer(12) is formed on a semiconductor substrate(10) by a predetermined thickness. A predetermined region of the insulation layer is eliminated to form a contact hole on the semiconductor substrate. A conductive layer is formed on the insulation layer including the contact hole. The conductive layer is etched back to expose the surface of the insulation layer. The insulation layer whose surface is exposed is etched back to a predetermined thickness. A conductive layer(16) is formed on the insulation layer etched back to the predetermined thickness.