发明名称 MICRO STRUCTURE ELEMENT AND MANUFACTURING METHOD THEREOF FOR FORMING THICK SILICON MICRO STRUCTURE
摘要 PURPOSE: A micro structure element and a manufacturing method thereof are provided to make a thick silicon micro structure without bending or damage caused by the residual stress of deposited silicon and to prevent the structure and a silicon substrate from sticking to each other. CONSTITUTION: A silicon substrate(100) is doped with a predetermined electroconductive material to have electroconductivity and formed with a micro structure of the predetermined thickness recessed from the center to both sides. A first glass substrate(200) has a first surface on which first and second electrodes(301,302) separated from each other are formed. The first electrode is directly contacted with the silicon substrate. The second electrode faces the recessed micro structure of the silicon substrate. External contact electrodes(303,304) are disposed to connect the electrodes to the outside on a second surface opposite to the first surface. A second glass substrate(300) is adhered on the opposite side of an adhering surface of the first glass substrate of the silicon substrate to seal the micro structure.
申请公布号 KR100442824(B1) 申请公布日期 2004.07.23
申请号 KR19970018325 申请日期 1997.05.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 AHN, SEUNG DO;SONG, GI MU
分类号 G01C19/00;(IPC1-7):G01C19/00 主分类号 G01C19/00
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