| 摘要 |
A read circuit for a multibit memory cell is provided to convert a multi-level voltage output from the multibit memory cell into the desired number of binary levels. For example, if the multibit memory cell can be programmed to have four resistance levels, which produce four output voltages respectively, the read circuit is provided with two binary outputs. For additional resistance levels, and corresponding voltage levels, additional binary outputs may be provided. <IMAGE>
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