发明名称 LEAD FRAME, MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE USING THE SAME AND MANUFACTURING METHOD THEREOF, FOR FORMATION EXTERNAL TERMINAL OF RESIN-SEALING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A lead frame, a manufacturing method thereof, a semiconductor device using the same and a manufacturing method thereof are provided to form a highly precise and thin semiconductor device with reliability by selectively and lightly etching a part of a metal substrate and by forming a lead terminal on a groove portion. CONSTITUTION: A lead frame includes a lead frame body(1), a groove portion for forming a lead, and a lead portion. The lead frame body is made of a sheet-shaped of metal. The groove portion for forming a lead is formed by predetermined depth in a lead forming region of the lead frame body. The lead portion is formed to protrude from the groove portion onto the surface of the lead frame body. The lead portion includes a first conductor layer(3b) formed on the groove portion, a second conductor layer(3c), and a third conductor layer(3d). The first conductor layer is assembled to an assembling member, and the third conductor layer is assembled to a bonding pad of a semiconductor chip.
申请公布号 KR20040066032(A) 申请公布日期 2004.07.23
申请号 KR20040002848 申请日期 2004.01.15
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KOBAYASHI TAKESHI;SUGOU HISAO
分类号 H01L23/48;C25D1/00;H01L21/56;H01L21/68;H01L23/31;H01L23/495;H01L23/50 主分类号 H01L23/48
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