| 摘要 |
<p>A small-sized, high-capacity thin film capacitor which is excellent in dielectric characteristics and a method for manufacturing such a capacitor are disclosed. The thin film capacitor comprises a supporting substrate having a surface oriented in the [001] direction, a buffer layer disposed on the supporting layer and having a surface oriented in the [001] direction, a lower electrode thin film disposed on the buffer layer and oriented in the [001] direction, a dielectric thin film disposed on the lower electrode thin film and containing a bismuth lamellar compound oriented in the [001] direction, namely in the c-axis direction, and an upper electrode thin film disposed on the dielectric thin film.</p> |
