发明名称 |
INDIUM PHOSPHIDE HETEROJUNCTION BIPOLAR TRANSISTOR LAYER STRUCTURE AND METHOD OF MAKING THE SAME |
摘要 |
<p>An epitaxial layer structure that achieves reliable, high speed, and low noise device performance in indium phosphide (InP) based heterojunction bipolar transistors (HBTs) for high data rate receivers and optoelectronic integrated circuits (OEIC). The layer consists of an n+ InGaAs subcollector, an n+ InP subcollector, an unintentionally doped InGaAs collector, a carbon-doped base, an n-type InP emitter, an n-type InGaAs etch-stop layer, an n-type InP emitter, and an InGaAs cap layer.</p> |
申请公布号 |
WO2004061970(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
WO2003US37893 |
申请日期 |
2003.11.26 |
申请人 |
XINDIUM TECHNOLOGIES, INC. |
发明人 |
FENG, MILTON;SHEN, SHYH-CHIANG;CARUTH, DAVID, C. |
分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/737;(IPC1-7):H01L29/24 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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