| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the on-state resistance, heat radiation property and inductance of an electric power element. <P>SOLUTION: A semiconductor device comprises electric conduction padding regions 26 and 36, and each electrical conduction padding region is electrically connected to multiple metal tracings. Each of the multiple metal tracings is connected to spread in sequence. Electric conduction contact elements such as a solder bump and via are attached to their respective electric conduction padding regions, and can be arranged, in a repetitive pattern where the conductive element has a first pitch. The semiconductor device comprises translation tracings 50 and 60, and each translation tracing can be electrically connected to two or more electrical conducting contact elements. Each translation tracing can have an interconnection element attached there. The interconnection elements can be arranged in a repetitive pattern that has a secondary pitch, which is substantially greater than the first pitch. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
