| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein electric field concentration under high voltage between circuit pattern material and insulator is relieved and resistance to voltage is improved. SOLUTION: In a circuit pattern 1a formed on an insulating substrate 1 on which a semiconductor element to be used under high voltage is mounted, the surface of an end 1c having a steeply rising form is covered with conductor material 5 in such as manner that the cross-section becomes a roundish form. COPYRIGHT: (C)2004,JPO&NCIPI
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