| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase of a white dot due to metal diffusion from an optical waveguide to a photoelectric conversion part and improve the quality of an image. SOLUTION: The optical waveguide comprising a first optical waveguide 9A made of plasma silicon nitride and a second optical waveguide 9B made of polyimide is provided on a light reception area of a photo diode 1. After the plasma silicon nitride containing hydrogen is formed, it is annealed in a hydrogen atmosphere to promote the supply of hydrogen into the photo diode 1. Thus, crystal defect causing by diffused metal from the polyimide or the like to the photo diode 1 can be prevented, and the effect of reducing white dots can be also obtained. In addition, an LP-silicon nitride forming an etching stopper film 5A to be used for the formation of the optical waveguide is provided in an area other than the light reception area, e.g. on the upper layer of a transistor, so that the permeation of hydrogen can be prevented and the degrading of characteristic be also prevented. COPYRIGHT: (C)2004,JPO&NCIPI
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