发明名称 MASK, ITS MANUFACTURING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a very precise and reliable mask which does not develops warping or deformation, to provide a (stencil) mask which allows very accurate ion implantation in an ion implantation technology, and to provide a very accurate and reliable method for ion implantation which needs no formation of a resist pattern. SOLUTION: The mask comprises a mask pattern section, a plate-like body having at least one pn junction, and a current supply section for supplying a current to the pn junction. In the mask, a current is applied to the pn junction to induce the Peltier effect to control the temperature of the mask pattern section. With this mask, an ion implantation region can be formed with high reliability without forming a resist pattern. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004207385(A) 申请公布日期 2004.07.22
申请号 JP20020372859 申请日期 2002.12.24
申请人 ROHM CO LTD;TOSHIBA CORP 发明人 KUMANO NOBORU;MIKATA YUICHI
分类号 H01J37/09;G03F1/00;G03F7/00;G21G5/00;H01L21/027;H01L21/266;H01L35/00;(IPC1-7):H01L21/266 主分类号 H01J37/09
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