THIN FILM ELECTROLUMINESCENT ELEMENT AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a thin film EL element with high luminous efficiency having a structure hardly generating concentration quenching in the luminous lay by dissolving the light-emitting center material in the luminous layer until it becomes very high concentration. SOLUTION: In the thin film EL element, a lower electrode layer 2, lower insulating layer 3, first buffer layer 51, luminous layer 4, second buffer layer 52, upper insulating layer 6, and upper electrode layer 7 are laminated in order on a glass substrate 1, and the El emission from the luminous layer 4 is output through the glass substrate 1. The center of light emission is formed by at least one material selected from the element of Ce, Sm, Eu, Tb, Tm, Pr, Nd, Er, Yb, Lu, Pm, Gd, Dy, Ho, Mn, Cu, Pb, and the above luminous layer 4 is constructed of a fluorescent material which dissolves the above material 80-100 mol%. This fluorescent material is made of, for example, EuGa2S4. COPYRIGHT: (C)2004,JPO&NCIPI