发明名称 ZrB2 SINGLE CRYSTAL, ITS MANUFACTURING METHOD AND SUBSTRATE FOR SEMICONDUCTOR THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a ZrB<SB>2</SB>single crystal having a large diameter and high quality. SOLUTION: The single crystal consisting of ZrB<SB>2</SB>has≥15 mm maximum diameter, and in particular, it preferably contains Cr by 0.1 to 10 mol%. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004203666(A) 申请公布日期 2004.07.22
申请号 JP20020373992 申请日期 2002.12.25
申请人 KYOCERA CORP 发明人 OU USOU
分类号 C30B29/10;C30B1/10;(IPC1-7):C30B29/10 主分类号 C30B29/10
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