发明名称 |
SILICIDE TARGET MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicide target having an Si single phase capable of reducing production of particles during the sputtering to a considerably low level. SOLUTION: In the target composition with the Si single phase present therein, a temporarily sintered body is formed by the heating reaction of powder mixture of silicide-forming metal element M with Si mixed to the composition smaller than the target composition and Si, and pulverized. Si powder is added thereto and mixed therewith, and heated to form the temporarily sintered body, and re-pulverized. The re-pulverized powder is pressurized and sintered to manufacture a silicide target. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004204278(A) |
申请公布日期 |
2004.07.22 |
申请号 |
JP20020373508 |
申请日期 |
2002.12.25 |
申请人 |
HITACHI METALS LTD;TOPPAN PRINTING CO LTD |
发明人 |
HIRAKAWA EIJI;TANIGUCHI SHIGERU;HARAGUCHI TAKASHI;MATSUO TADASHI;II TOSHIHIRO;SAGA TADASHI |
分类号 |
C23C14/34;H01L21/285;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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