发明名称 |
Semiconductor with tensile strained substrate and method of making the same |
摘要 |
An exemplary embodiment relates to a method for forming a metal oxide semiconductor field effect transistor (MOSFET). The method includes providing a substrate having a gate formed above the substrate and performing at least one of the following depositing steps: depositing a spacer layer and forming a spacer around a gate and gate insulator located above a layer of silicon above the substrate; depositing an etch stop layer above the spacer, the gate, and the layer of silicon; and depositing a dielectric layer above the etch stop layer. At least one of the depositing a spacer layer, depositing an etch stop layer, and depositing a dielectric layer comprises high compression deposition which increases in tensile strain in the layer of silicon.
|
申请公布号 |
US2004142545(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20030346617 |
申请日期 |
2003.01.17 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NGO MINH V.;BESSER PAUL R.;LIN MING REN;WANG HAIHONG |
分类号 |
H01L29/10;(IPC1-7):H01L21/320 |
主分类号 |
H01L29/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|