发明名称 |
Plasma CVD apparatus and dry cleaning method of the same |
摘要 |
In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.
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申请公布号 |
US2004139915(A1) |
申请公布日期 |
2004.07.22 |
申请号 |
US20040752520 |
申请日期 |
2004.01.08 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., A JAPAN CORPORATION |
发明人 |
ICHIJO MITSUHIRO |
分类号 |
C23C16/44;C23C16/509;C23C16/515;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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