发明名称 TESTABLE ELECTROSTATIC DISCHARGE PROTECTION CIRCUITS
摘要 A semiconductor die has a bonding pad for a MOSFET such as a power MOSFET and a separate bonding pad for ESD protection circuitry. Connecting the bonding pads together makes the ESD protection circuitry functional to protect the MOSFET. Before connecting the bonding pads together, the ESD protection circuitry and/or the MOSFET can be separately tested. A voltage higher than functioning ESD protection circuitry would permit can be used when testing the MOSFET. A packaging process such as wire bonding or attaching the die to a substrate in a flip-chip package can connect the bonding pads after testing.
申请公布号 AU2003297407(A1) 申请公布日期 2004.07.22
申请号 AU20030297407 申请日期 2003.12.19
申请人 ADVANCED ANALOGIC TECHNOLOGIES, INC. 发明人 RICHARD WILLIAMS;MICHAEL CORNELL;WAI, TIEN CHAN
分类号 H01L23/485;H01L23/495;H01L23/58;H01L23/62;H01L27/02;H01L29/78 主分类号 H01L23/485
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