| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for simply measuring the diffusion depth Xj of a semiconductor device. SOLUTION: A gallium ion (Ga3+) is irradiated from an ion gun 11 of a FIB device 9 to an exposed surface 22 again by exposing a cross section through a cleavage or FIB processing a semiconductor material. As a result, a secondary electron is emitted from the exposed surface 22. The secondary electron is shown white for an electrically conducting part, black for an insulating part, and gray for a semiconductor part on a CRT 14 through a detector 13 having a lens 12. This makes the diffusion depth Xj of the semiconductor device visible. COPYRIGHT: (C)2004,JPO&NCIPI
|
