发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device having reduced the manufacturing cost. SOLUTION: A semiconductor wafer with a pattern in the thickness of 140μm and two kinds of mirror wafers in the thickness of 140μm and 120μm are prepared. The semiconductor wafer and the mirror wafers are respectively diced to form the pieces of semiconductor chip 2 and mirror chip 4. The chip 12 in the thickness of 140μm can be obtained in direct as the semiconductor chip 2 in the thickness of 140μm. Moreover, the chip 11 in the thickness of 280μm is formed by laminating the semiconductor chip 2 of 140μm and mirror chip 4 of 140μm. The chip 10 of 400μm is formed by laminating the semiconductor chip 2 of 140μm, mirror chip 4 of 140μm and mirror chip 4 of 120μm. As a result, extra chips can be saved by reducing the sheets of wafer with pattern used and cost of semiconductor chip 2 can also be lowered. COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004207356(A) |
申请公布日期 |
2004.07.22 |
申请号 |
JP20020372320 |
申请日期 |
2002.12.24 |
申请人 |
RENESAS TECHNOLOGY CORP;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
ASADA TAKAO;HOSHINO MEGUMI;SASAKI TAKAMITSU;KITABORI MASAHIRO;SOMEYA TOMOKO;MASUDA TOSHIZANE |
分类号 |
H01L21/304;H01L21/301;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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