| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon wafer heat treatment method which prevents specific resistance near a surface layer from being changed owing to phosphorus stuck from an environment and a heat treatment device to a silicon wafer in heat treatment for performing high temperature heat treatment at≥1100°C in an inert gas atmosphere of Ar gas or H<SB>2</SB>including Ar, He, N<SB>2</SB>, or the like. SOLUTION: In the method for heat treatment of a silicon wafer to which boron is doped in a high temperature heat treatment furnace in an Ar gas atmosphere or an inert gas atmosphere containing Ar gas, the silicon wafer is preparatorily heated before heat treatment to remove phosphorus stuck to the wafer, and then heat treatment of the wafer is performed. Since the silicon wafer is heated in low temperatures before applying the wafer to high temperature heat treatment, phosphorus stuck to the silicon wafer can be previously removed, so that, even when phosphorus is stuck to the silicon wafer from the environment and the heat treatment device, the phosphorus is removed, phosphorus pollution is prevented, and the specific resistance of the silicon wafer near the surface layer is not changed even under aimed high temperature heat treatment. COPYRIGHT: (C)2004,JPO&NCIPI
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