| 摘要 |
PROBLEM TO BE SOLVED: To provide an embedded gate type semiconductor device in which an interval of gates is reduced as much as possible, the density of channels is improved to obtain low on-resistance, a decrease in withstand voltage due to an electric field concentration near the bottom of the gate is prevented, and the prevention of the decrease in the withstand voltage and off-characteristics are compatible. SOLUTION: A number of gate electrodes 106 each having a rectangular sectional shape in a flat section are disposed in a lattice state. An interval 106T between long sides of the gate electrode 106 is shortened as compared with an interval 106S between short sides of the gate electrode. Further, a band-like contact opening 108 is formed between the short sides of the gate electrode 106, and a p<SP>+</SP>-type source electrode 100 and an n<SP>+</SP>-type region 104 are brought into contact with a source electrode here. Thus, the interval 106T between the long sides of the gate electrode 106 can be set irrespective of the width of the contact opening 108. COPYRIGHT: (C)2004,JPO&NCIPI
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