| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device with an MIM(Metal/Insulator/Metal) capacitor is provided to simplify process by omitting the opening of a glue layer, to improve adhesive force and to prevent oxidation of a plug by forming a glue layer between an interlayer dielectric and a lower electrode. CONSTITUTION: An interlayer dielectric(32) is formed on a substrate(30) with a transistor. A glue layer(33) and a buffer layer are formed on the interlayer dielectric. A capacitor contact hole is formed by etching the buffer layer, the glue layer and the interlayer dielectric. A plug(36) and a barrier layer(37) are filled in the contact hole. An MIM capacitor is then formed on the barrier layer and the glue layer.
|
