发明名称 |
Photoresist removal |
摘要 |
Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist. |
申请公布号 |
AU2003297347(A8) |
申请公布日期 |
2004.07.22 |
申请号 |
AU20030297347 |
申请日期 |
2003.12.17 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
DAVID W. MINSEK;DAVID D. BERNHARD;THOMAS H. BAUM;MELISSA K. MURPHY |
分类号 |
C11D7/06;C11D7/32;C11D7/50;C11D11/00;G03F7/42;H01L21/306;H01L21/311 |
主分类号 |
C11D7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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