MULTILAYER PHOTORESIST SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a lower layer resist having excellent etching resistance and antireflection property for a multilayer photoresist system in which an image is formed with a short exposure wavelength, in particular, for an overcoated silicon-containing photoresist.

SOLUTION: The multilayer photoresist is composed of: a lower layer coating layer comprising a constituent component containing an aromatic and/or alicyclic group and a constituent component containing one or more chromophore groups; and an upper layer coating as a photoresist composition coating layer containing a photoactive constituent component and a Si-containing constituent component for forming an image with a wavelength of <200 nm.

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