发明名称 |
SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER ARRAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser array beam source capable of providing a high power with high light condensing. SOLUTION: The semiconductor laser element 1 has a first conductivity clad layer 13, a second conductivity clad layer 17, and a quantum well active layer 15 sandwitched by the layer 13 and the layer 17. A plurality of second conductivity semiconductor regions 21 having a refractive index smaller than that of the layer 17 for laser light and a depth which does not reach the layer 15 are arranged in the layer 17 at predetermined intervals. COPYRIGHT: (C)2004,JPO&NCIPI
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申请公布号 |
JP2004207646(A) |
申请公布日期 |
2004.07.22 |
申请号 |
JP20020377721 |
申请日期 |
2002.12.26 |
申请人 |
HAMAMATSU PHOTONICS KK;JAPAN SCIENCE & TECHNOLOGY AGENCY |
发明人 |
SUGA HIROBUMI;TEI USHIN;WATANABE AKIYOSHI |
分类号 |
H01S5/22;H01S5/065;(IPC1-7):H01S5/22 |
主分类号 |
H01S5/22 |
代理机构 |
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主权项 |
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地址 |
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