发明名称 SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER ARRAY
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser array beam source capable of providing a high power with high light condensing. SOLUTION: The semiconductor laser element 1 has a first conductivity clad layer 13, a second conductivity clad layer 17, and a quantum well active layer 15 sandwitched by the layer 13 and the layer 17. A plurality of second conductivity semiconductor regions 21 having a refractive index smaller than that of the layer 17 for laser light and a depth which does not reach the layer 15 are arranged in the layer 17 at predetermined intervals. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004207646(A) 申请公布日期 2004.07.22
申请号 JP20020377721 申请日期 2002.12.26
申请人 HAMAMATSU PHOTONICS KK;JAPAN SCIENCE & TECHNOLOGY AGENCY 发明人 SUGA HIROBUMI;TEI USHIN;WATANABE AKIYOSHI
分类号 H01S5/22;H01S5/065;(IPC1-7):H01S5/22 主分类号 H01S5/22
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